Batman Universitesi Yasam Bilimleri Dergisi
www.yasambilimleridergisi.com
Cilt 5, Sayı 2  Temmuz-Aralık 2015  (ISSN: 2147-4877, E-ISSN: 2459-0614)
F. Aslan, Ö. Güllü, Y. S. Ocak, Ş. Rüzgar, A. Tombak, C. Özaydın, O.Pakma, İ. Arsel

NO Makale Adı
1443956700 FABRICATION AND INVESTIGATION OF ELECTRICAL PARAMETERS OF Al/CuPc /p-InP CONTACTS WITH ORGANIC INTERLAYER

In this study, copper phthalocyanine (CuPc) was coated on p-InP crystal by using thermal evaporation method. The Al/CuPc/p-InP diode was fabricated by evaporating aluminum metal on the organic thin film in vacuum atmosphere. The current-voltage (I-V) measurement was carried out for Al/CuPc/p-InP diode at room temperature, in the dark and under illumination. By using I-V measurements, it has been seen that diode structure shows rectifying property. It has been used a light source of 100 mW/cm2 intencity and found that the diode has photodiode properties. Furthermore, the electrical parameters (ideality factor (n), barier height ( Φb) and series resistance (Rs) ) of the Al/CuPc/p-InP Schottky diode were calculated by different methods.