Batman Universitesi Yasam Bilimleri Dergisi
Cilt 2, Sayı 1  Temmuz-Aralık 2012  (ISSN: 2147-4877, E-ISSN: 2459-0614)
İsmail ARSEL

NO Makale Adı
1363021222 On The Profile Of Frequency Dependent Series Resistance And Interface States In Al/TiO2/p-Si (MIS) Structures

The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Al/TiO2/p-Si (MIS) structures by prepared the sol-gel method have been investigated taking into account the effect of the interface states (Nss) and the series resistance (Rs) at room temperature. It is found that the measured capacitanec (C) and conductance (G/ω) are strongly dependent on bias voltage and frequency. The values of measured C and G/ω decrease in accumulation and depletion regions with increasing frequencies due to localized Nss at Si/TiO2 interface. The Rs vs. V plots give a peak and the peak position is shifting toward inversion region with decreasing frequency. In order to obtained the real MIS capacitance and conductance both C-V and G/ω-V measured under forward and reverse biases were corrected for the effect of Rs. Frequency dependent the C-V and G/ω-V measurements confirm that the Nss and Rs of the MIS structures are very important two parameters that strongly influence the electrical characteristics.